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PDF Si3865DV Data sheet ( Hoja de datos )
| Número de pieza | Si3865DV | |
| Descripción | Load Switch | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de Si3865DV (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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New Product
Load Switch with Level-Shift
Si3865DV
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V)
rDS(on) (W)
1.8 to 8
0.080 @ VIN = 4.5 V
0.110 @ VIN = 2.5 V
0.175 @ VIN = 1.8 V
FEATURES
D 80-mW Low rDS(on) TrenchFETt
D 1.8 to 8-V Input
D 1.5 to 8-V Logic Level Control
ID (A)
"2.7
"2.2
"1.7
1.8ĆV Rated
D Low Profile, Small Footprint TSOP-6 Package
D 3000-V ESD Protection On Input Switch, VON/OFF
D Adjustable Slew-Rate
DESCRIPTION
The Si3865DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFETR is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3865DV operates on
supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A.
APPLICATION CIRCUITS
Si3865DV
VIN
R1
4
Q2
6
2, 3
C1
6
ON/OFF
Ci
R2
5
Q1
1
R2
Co
VOUT
LOAD
GND
Switching Variation
R2 @ VIN = 2.5 V, R1 = 20 kW
40
32
td(off)
IL = 1 A
VON/OFF = 3 V
Ci = 10 mF
Co = 1 mF
tf
24
16
tr
8
td(on)
0
02468
R2 (kW)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
COMPONENTS
R1 Pull-Up Resistor
Typical 10 kW to 1 mW*
R2 Optional Slew-Rate Control
Typical 0 to 100 kW*
C1 Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 70867
S-60515—Rev. A, 05-Apr-99
The Si3865DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
www.vishay.com S FaxBack 408-970-5600
2-1
1 page  
New Product
Si3865DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Variation
R2 @ VIN = 1.8 V, R1 = 300 kW
400
320 tf
240 td(off)
160 IL = 1 A
VON/OFF = 3 V
Ci = 10 mF
Co = 1 mF
80
tr
td(on)
0
0 10 20 30 40
R2 (kW)
50
60
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Dureation (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 150_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Document Number: 70867
S-60515—Rev. A, 05-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet Si3865DV.PDF ] | |
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