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PDF AOT8N65 Data sheet ( Hoja de datos )
| Número de pieza | AOT8N65 | |
| Descripción | 8A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT8N65/AOTF8N65
650V, 8A N-Channel MOSFET
General Description
Product Summary
The AOT8N65 & AOTF8N65 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT8N65L & AOTF8N65L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
750V@150℃
8A
< 1.15Ω
D
G
D
S
AOT8N65
G
D
S
AOTF8N65
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT8N65
AOTF8N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
8 8*
5.2 5.2*
32
3.4
173
347
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
208
1.67
50.0
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT8N65
65
0.5
AOTF8N65
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.6
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 3:Jul 2011
www.aosmd.com
Page 1 of 6
1 page  
AOT8N65/AOTF8N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N65 (Note F)
100
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N65 (Note F)
100
Rev3: Jul 2011
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOT8N65.PDF ] | |
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