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PDF STF5N80K5 Data sheet ( Hoja de datos )
| Número de pieza | STF5N80K5 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF5N80K5
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STF5N80K5
VDS
800 V
RDS(on) max.
1.75 Ω
ID
4A
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STF5N80K5
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
5N80K5
TO-220FP
Packing
Tube
May 2016
DocID028509 Rev 3
This is information on a product in full production.
1/13
www.st.com
1 page  
STF5N80K5
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf Fall time
Electrical characteristics
Table 7: Switching times
Test conditions
Min. Typ. Max. Unit
VDD= 400 V, ID = 2 A, RG = 4.7 Ω
VGS = 10 V
see Figure 14: "Test circuit for
resistive load switching times" and
Figure 19: "Switching time
waveform"
- 12.7
- 11.7
- 23
- 14.8
-
-
-
-
ns
ns
ns
ns
Symbol Parameter
Table 8: Source-drain diode
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4 A, VGS = 0 V
trr Reverse recovery time
Qrr Reverrse recovery charge
IRRM Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs,
VDD = 60 V
see Figure 16: "Test circuit
for inductive load switching
and diode recovery times"
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 4 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
see Figure 16: "Test circuit
for inductive load switching
and diode recovery times"
Min. Typ. Max. Unit
- 4A
- 16 A
- 1.6 V
- 265
ns
- 1.59
µC
- 12
A
- 386
- 2.18
ns
µC
- 11.3
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1mA, ID= 0 A
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028509 Rev 3
5/13
5 Page 
STF5N80K5
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Package information
Table 10: TO-220FP package mechanical data
mm
Min.
Typ.
Max.
4.4 4.6
2.5 2.7
2.5 2.75
0.45 0.7
0.75 1
1.15 1.70
1.15 1.70
4.95 5.2
2.4 2.7
10 10.4
16
28.6
9.8
30.6
10.6
2.9 3.6
15.9 16.4
9 9.3
3 3.2
DocID028509 Rev 3
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STF5N80K5.PDF ] | |
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