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Número de pieza | CJPF05N60 | |
Descripción | N-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJPF05N60 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
600V
2.5Ω@10V
4.5A
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
such as power suplies, converters, power motor controls and bridge
circuits.
TO-220F
1. GATE
2. DRAIN
3. SOURCE
123
FEATURES
z Low RDS(on)
z Lower Capacitances
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF05N60
XXX
CJPF05N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation (note2,Ta=25℃)
Maximum Power Dissipation (note3,Tc=25℃)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
EAS
PD
RθJA
TJ
Tstg
Value
600
±30
4.5
250
2
120
62.5
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
www.cj-elec.com
1
D,May,2016
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CJPF05N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJPF05N60 | N-Channel MOSFET | JCET |
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