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PDF HM640 Data sheet ( Hoja de datos )
| Número de pieza | HM640 | |
| Descripción | N-channel Enhanced VDMOSFET | |
| Fabricantes | H&M Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HM640 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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HM640
General Description：
HM640, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.18Ω)
l Low Gate Charge (Typical Data:24nC)
l Low Reverse transfer capacitances(Typical:25pF)
l 100% Single Pulse avalanche energy Test
Applications：
CRT、TV/Monitor and Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
200
18
156
0.12
Rating
200
18
11.2
72
±30
950
90
4.2
5.0
156
1.25
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
Page 1 of 10
1 page  
HM 640
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HM640.PDF ] | |
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