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PDF AOE6936 Data sheet ( Hoja de datos )
| Número de pieza | AOE6936 | |
| Descripción | 30V Dual Asymmetric N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOE6936
30V Dual Asymmetric N-Channel MOSFET
General Description
• Bottom Source Technology
• Very Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Q1
30V
55A
< 5mΩ
< 8mΩ
Q2
30V
85A
< 2mΩ
< 3mΩ
Applications
• DC/DC Converters in Computing, Servers, and POL
• Non-Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
Top View
PIN1
DFN 5X6E
Bottom View
D2/S1
G2 G1 1
S2 PIN1 S1/D2 2 Q1
D1
G1
S1/D2
D1 3
D1 D1 4
Top View
S2
D1
8 G2
Q2
7 D2/S1
6 D2/S1
5 D2/S1
G2 8
D2/S1 7
D2/S1 6
D2/S1 5
Bottom View
1 G1
2 S1/D2
S2 D1
3 D1
4 D1
Orderable Part Number
AOE6936
Package Type
DFN 5x6E
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
Power Dissipation A
10µs
TC=25°C
TC=100°C
TA=25°C
TA=70°C
VSPIKE
PD
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30 30
±20 ±20
55 85
35 67
120 208
21 32
16 25
60 80
18 32
36 36
24 39
9.6 15
3.5 3.5
2.2 2.2
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case (Note)
Note: Bottom S2, D1.
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
25
50
4
Typ Q2
25
50
2.4
Max Q1
35
65
5.2
Max Q2
35
65
3.2
Units
°C/W
°C/W
°C/W
Rev.2.0 : July 2016
www.aosmd.com
Page 1 of 10
1 page  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 60
25 50
20 40
15 30
10 20
5 10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
1000
TA=25°C
100
10
1
1E-05
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.0001
Single Pulse
PDM
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev.2.0 : July 2016
www.aosmd.com
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AOE6936.PDF ] | |
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