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PDF AP6901GSM-HF Data sheet ( Hoja de datos )
| Número de pieza | AP6901GSM-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6901GSM-HF
Halogen-Free Product
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
▼ Simple Drive Requirement
▼ DC-DC Converter Suitable
S1/D2
S1/D2
S1/D2
G1
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
SO-8
Description
CH-1
S2/A
G2
D1D1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
N-Channel 1
MOSFET
D1
30V
16.5mΩ
7.1A
30V
16mΩ
9.2A
S1/D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
G2
N-Channel 2
MOSFET
S2/A
Schottky Diode
Rating
Channel-1 Channel-2
30 30
+20 +20
7.1 9.2
5.7 7.4
30 30
1.4 2.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a (CH-1)
Rthj-a (CH-2)
Thermal Resistance Junction-ambient3
Thermal Resistance Junction-ambient3
Value
Typ. Max.
70 90
42 55
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200911131
1 page  
AP6901GSM-HF
Channel-1
40
T A = 25 o C
30
20
10V
7.0V
6.0V
5.0V
V G = 4.0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
24
ID=5A
T A =25 o C
20
16
12
8
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
8
6
4
T j =150 o C
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
40
TA=150oC
1 0V
7.0V
30 6.0V
5.0V
V G = 4.0V
20
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID=7A
V G =10V
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.3
1.0
0.7
0.4
-50
0
50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AP6901GSM-HF.PDF ] | |
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