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PDF AP6900GH-HF Data sheet ( Hoja de datos )
| Número de pieza | AP6900GH-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP6900GH-HF
Preliminary
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Performance
▼ Two Independent Device
▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SDPAKTM used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
CH-1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
6.2mΩ
72A
30V
10mΩ
45A
D1 (TAB1)
D2 (TAB2)
S1 G1
S2
G2
SDPAKTM
D1 D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
G1 G2
S1
Rating
Channel-1 Channel-2
30 30
+ 20 + 20
72 45
18 14.1
14 11.2
72 60
3
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c (CH-1)
Maximum Thermal Resistance, Junction-case
Rthj-c (CH-2)
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
2.5
4.0
42
S2
Units
V
V
A
A
A
A
W
℃
℃
Unit
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
20090420pre
1 page  
Channel-1
10
8
6
I D = 18 A
V DS =1 5 V
V DS = 18 V
V DS =24V
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
1s
DC
100
Fig 9. Maximum Safe Operating Area
AP6900GH-HF
f=1.0MHz
1600
1200
C iss
800
C400
oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=75oC/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP6900GH-HF.PDF ] | |
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