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PDF BSC097N06NS Data sheet ( Hoja de datos )
| Número de pieza | BSC097N06NS | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC097N06NS
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
9.7 mW
46 A
14 nC
12 nC
PG-TDSON-8
Type
BSC097N06NS
Package
PG-TDSON-8
Marking
097N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
46 A
V GS=10 V, T C=100 °C
29
V GS=10 V, T C=25 °C,
R thJA =50K/W2)
12
Pulsed drain current3)
Avalanche energy, single pulse4)
I D,pulse
E AS
T C=25 °C
I D=30 A, R GS=25 W
184
13 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev.2.0
page 1
2013-10-17
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
180
150
10 V
120
90
60
30
0
0.0
0.5 1.0
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
180
BSC097N06NS
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
5V
5.5 V
16
6V
7V
12
7V
6V 8
10 V
5.5 V
5V
4
1.5 2.0
0
0 30 60 90 120 150 180
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
150
60
120
90
60
30
0
0
Rev.2.0
150 °C
25 °C
246
VGS [V]
40
20
0
80
page 5
20 40 60
ID [A]
80
2013-10-17
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC097N06NS.PDF ] | |
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