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PDF BSC046N10NS3G Data sheet ( Hoja de datos )
| Número de pieza | BSC046N10NS3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOSTM3 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC046N10NS3 G
Product Summary
VDS
RDS(on),max
ID
100 V
4.6 mW
100 A
PG-TDSON-8
Type
BSC046N10NS3 G
Package
PG-TDSON-8
Marking
046N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
Gate source voltage
E AS
V GS
I D=50 A, R GS=25 W
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
100
85
17.0
400
350
±20
156
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.0
page 1
2011-09-29
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
10 V
6V
7V
100
5V
80
60
4.5 V
40
20
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
140
120
100
80
60
40
150 °C
20 25 °C
0
0
Rev. 2.0
24
VGS [V]
BSC046N10NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
10
4.5 V
8
6
4
5V
6V
7V
10 V
2
0
3 0 20 40 60 80 100
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
140
120
100
80
60
40
20
0
60
page 5
20 40 60 80 100
ID [A]
2011-09-29
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC046N10NS3G.PDF ] | |
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