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PDF MRF553 Data sheet ( Hoja de datos )
| Número de pieza | MRF553 | |
| Descripción | NPN SILICON RF TRANSISTOR | |
| Fabricantes | ASI | |
| Logotipo |  |
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MRF553
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF553 is designed for
Low power amplifier applications.
FEATURES:
• 12.5 V, 175 MHz.
• POUT = 1.5 W
• GP = 11.5 min.
• η = 60 % (Typ)
MAXIMUM RATINGS
IC 500 mA
VCB 36 V
PDISS
3.0 W @ TC = 75 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 41.7 °C/W
PACKAGE STYLE
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A
4.45
5.21
.175
.205
B
1.91
2.54
.075
.100
C
0.84
0.99
.033
.039
D
2.46
2.64
.097
.104
E
8.84
9.73
.348
.383
F
0.20
0.31
.008
0.12
G
7.24
8.13
.285
.320
H 1.65
0.65
J 3.25
0.128
K
0.64
1.02
.025
0.40
1 = COLLECTOR
2 = EMITTER
3 = BASE
4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 10 mA
BVCBO
IC = 5.0 mA
BVCES
IC = 5.0 mA
BVEBO
IE = 1.0 mA
ICES VCE = 15 V
hFE
VCE = 5.0 V
IC = 250 mA
CCB VCB = 10 V
f = 1.0 MHz
GPE
VCE = 12 V
POUT = 1.5 W
f = 175 MHz
η
ψ
MINIMUM TYPICAL MAXIMUM
16
36
36
4.0
5.0
30 200
UNITS
V
V
V
V
mA
---
12 20 pF
11.5 13
50 60
10:1
dB
%
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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