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PDF BSC16DN25NS3G Data sheet ( Hoja de datos )
| Número de pieza | BSC16DN25NS3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Type
OptiMOSTM3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC16DN25NS3 G
Product Summary
VDS
RDS(on),max
ID
250 V
165 mW
10.9 A
PG-TDSON-8
Type
BSC16DN25NS3 G
Package
PG-TDSON-8
Marking
16DN25NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Reverse diode dv /dt
E AS
dv /dt
I D=5.5 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
Value
10.9
7.7
44
120
10
±20
62.5
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.2
page 1
2011-07-14
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
25
6V
7V
20 10 V
5.5 V
5V
15
10
4.5 V
5
BSC16DN25NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
240
200
160
5.5 V
5V
120
8V
6V
10 V
80
40
0
012345
VDS [V]
0
0 4 8 12
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
25
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
24
16
20
15
10
5
0
0
Rev. 2.2
150 °C
25 °C
246
VGS [V]
20
16
12
8
4
0
80
page 5
4 8 12
ID [A]
16
2011-07-14
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSC16DN25NS3G.PDF ] | |
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