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PDF BSC120N03LSG Data sheet ( Hoja de datos )
| Número de pieza | BSC120N03LSG | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
•Halogen-free according to IEC61249-2-21
BSC120N03LS G
Product Summary
VDS
RDS(on),max
ID
30
12
39
PG-TDSON-8
V
mW
A
Type
BSC120N03LS G
Package
PG-TDSON-8
Marking
120N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=25 A, R GS=25 W
I D=39 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Value
39
24
33
21
12
156
35
10
6
±20
Unit
A
mJ
kV/µs
V
Rev. 2.1
page 1
2013-05-21
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
150
10 V
BSC120N03LS G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
28
3.2 V
5 V 24
20 3.5 V
100
4.5 V
16
12
4V
50 4 V
8
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
3.5 V
3.2 V
3V
2.8 V
3
4
0
0 10 20 30
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
4.5 V
5V
10 V
11.5 V
40 50
100
80
60
40
20
150 °C
25 °C
0
012345
VGS [V]
80
60
40
20
0
0
Rev. 2.1
page 5
40 80 120
ID [A]
160
2013-05-21
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC120N03LSG.PDF ] | |
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