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PDF BSC12DN20NS3G Data sheet ( Hoja de datos )
| Número de pieza | BSC12DN20NS3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Type
OptiMOSTM3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC12DN20NS3 G
Product Summary
VDS
RDS(on),max
ID
200 V
125 mΩ
11.3 A
PG-TDSON-8
Type
BSC12DN20NS3 G
Package
PG-TDSON-8
Marking
12DN20NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Reverse diode dv /dt
ID
I D,pulse
E AS
dv /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=5.7 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
Value
11.3
8.0
45
60
10
±20
50
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.2
page 1
2011-05-20
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
25
10 V
7V
6V
20
5.5 V
15
5V
10
BSC12DN20NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
200
160
120
80
5V
5.5 V
6V
8V
10 V
5 4.5 V
40
00
012345
0 4 8 12
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
25
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
20
16
20 16
15 12
10 8
5
0
0
Rev. 2.2
150 °C
25 °C
246
V GS [V]
4
0
80
page 5
4 8 12
I D [A]
16
2011-05-20
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSC12DN20NS3G.PDF ] | |
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