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Número de pieza | BSC016N06NS | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSC016N06NS (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! BSC016N06NS
OptiMOSTM Power-MOSFET
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60
1.6
100
81
71
V
mW
A
nC
nC
PG-TDSON-8 FL
enlarged source interconnection
• Higher solder joint reliability due to enlarged source interconnection
Type
Package
Marking
BSC016N06NS
PG-TDSON-8 FL
016N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
100 A
V GS=10 V, T C=100 °C
100
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
30
Pulsed drain current3)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
380 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.1
page 1
2013-01-29
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
10 V
350
8V 6V
300
250
200
150
100
50
0
0.0
1.0
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
BSC016N06NS
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
5.5 V
5V
5V
3
2.5
2
1.5
1
5.5 V
6V
8V
10 V
0.5
2.0 0 50 100 150 200 250 300 350 400
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
320 160
240 120
160 80
80 40
150 °C
25 °C
0
0123456
VGS [V]
0
0
Rev. 2.1
page 5
20 40 60 80 100
ID [A]
2013-01-29
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BSC016N06NS.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSC016N06NS | Power MOSFET ( Transistor ) | Infineon |
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