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PDF BSB104N08NP3G Data sheet ( Hoja de datos )
| Número de pieza | BSB104N08NP3G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS™3 Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Low profile (<0.7mm)
• Dual sided cooling
• Low parasitic inductance
• N-channel, normal level
BSB104N08NP3 G
Product Summary
VDS
RDS(on),max
ID
80 V
10.4 mW
50 A
CanPAKTM M
MG-WDSON-2
Type
BSB104N08NP3 G
Package
MG-WDSON-2
Outline
MP
Marking
0308
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
Value
50
Unit
A
V GS=10 V, T C=100 °C
32
V GS=10 V, T A=25 °C,
R thJA=45 K/W1)
13
Pulsed drain current2)
I D,pulse T C=25 °C
200
Avalanche energy, single pulse3) E AS I D=30 A, R GS=25 W
110 mJ
Gate source voltage
V GS
±20 V
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.1
page 1
2013-11-28
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
150
10 V 8 V
100
50
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
100
BSB104N08NP3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
4.5 V
16
5.5 V
6V
12
6V
8
8V
10 V
5.5 V
5V
4
4.5V
3
0
0 50 100 150
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
120
80 80
60
40 40
20
0
0
Rev. 2.1
150 °C
25 °C
246
VGS [V]
0
80
page 5
30 60 90
ID [A]
120
2013-11-28
5 Page 
BSB104N08NP3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 11
2013-11-28
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BSB104N08NP3G.PDF ] | |
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