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Número de pieza | HFH7N60 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | HUASHAN ELECTRONIC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFH7N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Shantou Huashan Electronic Devices Co.,Ltd.
HFH7N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-3P
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)------------------------------------------------------------ 7A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 28A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 198W
Derate Above 25℃ ------------------------------------------------------------------------- 1.75W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 580mJ
IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 7A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 30mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.0V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-3P
Max 0.63
Max 40
Unit
℃/W
℃/W
1 page Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFH7N60
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HFH7N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFH7N60 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
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