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PDF AUIRF7207Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7207Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRF7207Q (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Features
Advanced Process Technology
Low On-Resistance
Logic Level Gate Drive
P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
AUTOMOTIVE GRADE
AUIRF7207Q
S 1
S2
S3
G4
A
8D
7D
6D
5D
Top View
HEXFET® Power MOSFET
VDSS
-20V
RDS(on) max
ID
0.06
-5.4A
Description
Specifically designed for Automotive applications, this cellular design
of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
SO-8
Base part number
AUIRF7207Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
AUIRF7207QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
EAS
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-55 to + 150
Units
V
A
W
W/°C
V
V
mJ
°C
Typ.
–––
Max.
50
Units
°C/W
1 2015-11-16
1 page  
AUIRF7207Q
Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
Fig 16a. Gate Charge Test Circuit
5
Fig 16b. Gate Charge Waveform
2015-11-16
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7207Q.PDF ] | |
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