DataSheet.es    


PDF AUIRF2903ZS Data sheet ( Hoja de datos )

Número de pieza AUIRF2903ZS
Descripción Power MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



Hay una vista previa y un enlace de descarga de AUIRF2903ZS (archivo pdf) en la parte inferior de esta página.


Total 12 Páginas

No Preview Available ! AUIRF2903ZS Hoja de datos, Descripción, Manual

  AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
AUIRF2903ZS
AUIRF2903ZL
30V
1.9m
2.4m
235A
160A
DD
S
G
D2Pak
AUIRF2903ZS
S
GD
TO-262
AUIRF2903ZL
G
Gate
D
Drain
S
Source
Base part number
AUIRF2903ZL
AUIRF2903ZS
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF2903ZL
AUIRF2903ZS
AUIRF2903ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
235
166
160
1020
231
1.54
± 20
231
820
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
 
°C 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
0.65
62
40
Units
°C/W
2015-9-30

1 page




AUIRF2903ZS pdf
  AUIRF2903ZS/ZL
240
200 Limited By Package
160
120
80
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-9-30

5 Page





AUIRF2903ZS arduino
  AUIRF2903ZS/ZL
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11 2015-9-30

11 Page







PáginasTotal 12 Páginas
PDF Descargar[ Datasheet AUIRF2903ZS.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AUIRF2903ZPower MOSFET ( Transistor )International Rectifier
International Rectifier
AUIRF2903ZLPower MOSFET ( Transistor )Infineon
Infineon
AUIRF2903ZLPower MOSFET ( Transistor )International Rectifier
International Rectifier
AUIRF2903ZSPower MOSFET ( Transistor )Infineon
Infineon

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar