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Número de pieza | CS3N50B3HY | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS3N50B3HY (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS3N50 B3HY
○R
General Description:
VDSS
500 V
CS3N50 B3HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
2.4 Ω
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-251, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω)
l Low Gate Charge (Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:4.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of electron ballast and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
500
3
2.3
12
±30
64
6.4
1.2
5
35
0.28
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 2015V01
1 page CS3N50 B3HY
○R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
1
1.00E-05
1.00E-04
6
PULSE DURATION = 10μs
5
DUTY CYCLE = 0.5%MAX
VDS=30V
4
3
2 +150℃
+25℃
1
-55℃
1.00E-03
Figure 6
1.00E-02
1.00E-01
t ,Pulse Width , Seconds
Maximun Peak Current Capability
5
4
3
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID=3A
ID=1.5A
ID=0.75A
ID=0.375A
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
4.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
4
2
6 4 6 8 10 12 14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1.5A
1.75
3.5 1.5
VGS=10V
1.25
31
0.75
2.5
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 2015 V01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS3N50B3HY.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS3N50B3HY | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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