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PDF CS20N60FA9H Data sheet ( Hoja de datos )
| Número de pieza | CS20N60FA9H | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS20N60F A9H
○R
General Description：
CS20N60F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.45Ω)
l Low Gate Charge (Typical Data:61nC)
l Low Reverse transfer capacitances(Typical: 20pF)
l 100% Single Pulse avalanche energy Test
600 V
20 A
85 W
0.36 Ω
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
20
14
80
±30
1200
100
4.5
5.0
85
0.68
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
1 page  
1000
100
CS20N60F A9H
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
○R
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
VGS=10V
10
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
1.00E+00
1.00E+01
100
PULSED TEST
VDS=50V
Figure 6 Maximun Peak Current Capability
1.4
1.2
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
10
1 +150℃
+25℃
-55℃
0.1
2
468
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
1
PULSED TEST
Tc =25 ℃
0.8
1
ID= 18A
0.8 ID= 9A
0.6 ID= 4.5A
0.4
0.2
0
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
VGS=10V
2.5 ID=3.0A
VGS=10V
2
0.6
VGS=20V
1.5
0.4
1
0.2 0.5
0
0 10 20 30 40 50 60
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
70
0
-100
-50
Figure
0 50 100 150 200
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS20N60FA9H.PDF ] | |
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