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PDF CS3205A8 Data sheet ( Hoja de datos )

Número de pieza CS3205A8
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



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No Preview Available ! CS3205A8 Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS3205 A8
R
General Description
CS3205A8, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson8m)
l Low Gate Charge (Typical Data:75nC)
l Low Reverse transfer capacitances(Typical:75pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa2
VGS
EAS a3
dv/dt a4
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
60
120
230
7
Rating
60
120 a1
84
480
±20
1300
3
230
1.4
17555 to 175
300
V
A
W
m
Units
V
A
A
A
V
mJ
V/ns
W
W/
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CS3205A8 pdf
CS3205 A8
R
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