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PDF TGA2963 Data sheet ( Hoja de datos )
| Número de pieza | TGA2963 | |
| Descripción | 20W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Test Instrumentation
Electronic Warfare (EW)
Radar
Communications
TGA2963
6 – 18GHz 20W GaN Power Amplifier
Product Features
Frequency Range: 6 – 18GHz
POUT: >43dBm @ PIN = 23dBm
PAE: >20% @ PIN = 23dBm
Large Signal Gain: >20dB @ PIN = 23dBm
Small Signal Gain: >26dB
Return Loss: >6.5dB
Bias: VD = 20V, IDQ = 2500mA, VG = -2.3V Typical
Chip Dimensions: 5.4 x 6.85 x 0.10 mm
Functional Block Diagram
23
4 56
17
12 11
10 9 8
General Description
Qorvo’s TGA2963 is a broadband high power MMIC
amplifier fabricated on Qorvo’s production 0.15um GaN
on SiC process (QGAN15). The TGA2963 operates from
6 – 18GHz and provides more than 20W saturated output
power with power-added efficiency >20% and large-signal
gain >20 dB. This combination of wideband performance
provides the flexibility designers are looking for to
improve system performance while reducing size and
cost.
The TGA2963 is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying
system integration. The broadband performance makes it
ideally suited in support of test instrumentation and
electronic warefare, as well as, supporting multiple radar
and communication bands.
The TGA2963 is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 12
3, 11
4, 10
5, 9
6, 8
7
Symbol
RF In
VG12
VD1
VD2
VG3
VD3
RF Out
Ordering Information
Part
TGA2963
ECCN Description
3A001.b.2.c
6 – 18GHz 20W GaN
Power Amplifier
Datasheet: Rev - 03-25-16
© 2016 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
1 page  
TGA2963
6 – 18GHz 20W GaN Power Amplifier
Typical Performance (Large Signal CW)
POUT vs. Frequency vs. VD
48
47 Temp. = +25 C
CW
PIN = 23dBm
46
45
44
43
42 Vd=18V
41 Vd=20V
Vd=22V
40
39 IDQ = 2500 mA
38
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
PAE vs. Frequency vs. VD
40
Temp. = +25 C
35
CW
PIN = 23dBm
30
25
20
15 Vd=18V
Vd=20V
10 Vd=22V
5
IDQ = 2500 mA
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Drain Current vs. Frequency vs. VD
8000
Temp. = +25 C
7000
PIN = 23dBm
6000
5000
4000
3000
2000
Vd=18V
Vd=20V
Vd=22V
1000
0
CW
IDQ = 2500 mA
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Gate Current vs. Frequency vs. VD
34
30 Temp. = +25 C
CW
PIN = 23dBm
26
22
18
14 IDQ = 2500 mA
10
6
2
-2
Vd=18V Vd=20V Vd=22V
-6
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
POUT vs. Frequency vs. IDQ
48
47 Temp. = +25 C
CW
PIN = 23dBm
46
45
44
43
42 Idq=2000mA
41 Idq=2500mA
40 Idq=3000mA
39 VD = 20 V
38
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
PAE vs. Frequency vs. IDQ
40
Temp. = +25 C
35
CW
PIN = 23dBm
30
25
20
15
10
5 VD = 20 V
Idq=2000mA Idq=2500mA Idq=3000mA
0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Datasheet: Rev - 03-25-16
© 2016 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
5 Page 
Application Circuit
TGA2963
6 – 18GHz 20W GaN Power Amplifier
C20
10uF
C19
10uF
R9
5.1 Ohm
R10
5.1 Ohm
C11
0.01uF
R1
5.1 Ohm
C1 C2
100pF//10KpF 100pF//10KpF
VD1
VG12
R11
5.1 Ohm
C21
10uF
C12
0.01uF
R3
5.1 Ohm
C13
0.01uF
R2
5.1 Ohm
R12
5.1 Ohm
C3
100pF//10KpF
C4
100pF//10KpF
R4
5.1 Ohm
C5
VD2
VD3 100pF//10KpF
VG3
C22
10uF
C14
0.01uF
VG = -2.3V
Typical
RF In
RF Out
VD = 20V,
IDQ = 2500mA
VG12
C15
0.01uF
C6 VD1
100pF//10KpF
C7
100pF//10KpF
R5
5.1 Ohm
C23
10uF
R13
5.1 Ohm
R14
5.1 Ohm
C24
10uF
VG3
VD2
C8
100pF//10KpF
R6
5.1 Ohm
C16
0.01uF
VD3
C10
100pF//10KpF
C9
100pF//10KpF
R17
5.1 Ohm
R8
5.1 Ohm
R16
5.1 Ohm
C17
0.01uF
R15
5.1 Ohm
C25
10uF
C18
0.01uF
C26
10uF
Bias-up Procedure
1. Set ID limit to 8A, IG limit to 50mA
2. Set VG to -5.0V
3. Set VD +20V
4. Adjust VG more positive until IDQ = 2500mA (VG ~ -
2.3V Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
4. Turn off VD supply
5. Turn off VG supply
Datasheet: Rev - 03-25-16
© 2016 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
11 Page | ||
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