PDF PTFC262808SV Data sheet ( Hoja de datos )

Número de pieza	PTFC262808SV
Descripción	Thermally-Enhanced High Power RF LDMOS FET
Fabricantes	Infineon
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No Preview Available ! PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2620 to 2690 MHz frequency band. Features include input and output match- ing, high gain and thermally-enhanced package. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262808SV Package H-37275G-6/2 with formed leads Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 19 40 18 Gain 17 35 30 16 25 Efficiency 15 20 14 15 13 c262808sv-gr1 10 38 40 42 44 46 48 50 52 Output Power (dBm) Features • Broadband internal matching • Typical CW pulsed performance, 2620 MHz, 28 V - Output power at P1dB = 280 W - Efﬁciency = 52% - Gain = 18 dB • Typical 1-carrier WCDMA performance, 2655 MHz, 28 V - Output power at P1dB = 56 W avg. - Efﬁciency = 24% - Gain = 18.0 dB • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) • Low thermal resistance • RoHS-compliant • Capable of handling 10:1 VSWR at 28 V, 280 W (CW) ouput power RF Characteristics Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon production test ﬁxture) VDD = 28 V, IDQ = 1800 mA, POUT = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Adjacent Channel Power Ratio Gps ηD ACPR 16.5 18.0 22 24 — –33 — — –30 dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 02.1, 2013-08-02 1 page PTFC262808SV Reference Circuit, tuned for 2620 – 2690 MHz DUT PTFC262808SV Test Fixture Part No. PCB LTN/PTFC262808SV V1 Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber ﬁles for this test ﬁxture on the Inﬁneon Web site at (http://www.inﬁneon.com/rfpower) R802 C801 C803 R801 RO4350, .020 R803 (60) S1 R107 S3 R108 R109 C103 R103 C102 C802 S2 R804 R102 RF_IN C105 C106 C101 C107 C104 C108 R104 R101 RO4350, .020 (60) C202 C206 C205 C207 VDD C212 C203 C201 C204 RF_OUT C209 + C211 C210 C208 VDD PTFC262808SV_IN_1A Reference circuit assembly diagram (not to scale) Component Information Component Description Input C101, C102, C107, C108 C103, C104 C105 C106 C801, C802, C803 R101, R102 Chip capacitor, 18 pF Capacitor, 10 µF Chip capacitor, 0.4 pF Chip capacitor, 0.7 pF Chip capacitor, 1,000 pF Resistor, 10 Ω Data Sheet PTFC262808SV_OUT_01 c 28 2 8 08 s v _c d_ 6 - 28 - 13 Suggested Manufacturer P/N ATC Murata Electronics North America ATC ATC Panasonic Electronic Components Panasonic Electronic Components 5 of 8 ATC800A180JW250X LLL31BC70G106MA01L ATC100B0R4CW150X ATC100B0R7CW150X ECJ-1VB1H102K ERJ-3GEYJ100V (table cont. next page) Rev. 02.1, 2013-08-02 5 Page

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