PDF PTFB211803FL Data sheet ( Hoja de datos )

Número de pieza	PTFB211803FL
Descripción	Thermally-Enhanced High Power RF LDMOS FETs
Fabricantes	Infineon
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No Preview Available ! PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal perform- ance and superior reliability. PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 Efficiency 30 -35 25 -40 IMD Up 20 -45 ACPR 15 -50 10 IMD Low -55 5 -60 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) Features • Broadband internal matching • Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 40 W - Linear Gain = 17.5 dB - Efficiency = 29.7% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 55% • Increased negative gate-source voltage range for improved performance in Doherty amplifiers • Integrated ESD protection. • Capable of handling 10:1 VSWR @ 30 V, 180 W (CW) output power • Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Measurements (not subject to production test–verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.3 A, POUT = 40 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Gps hD — 17.5 — 29.5 — — dB % Adjacent Channel Power Ratio ACPR — –38 — dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 14 Rev. 05.1, 2016-06-15 1 page Typical Performance (cont.) Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz 19 60 18 50 17 16 15 14 42 Gain Efficiency +25 ° C +85 ° C –10° C 44 46 48 50 Output Power (dBm) 40 30 20 10 52 -20 -30 -40 -50 -60 -70 40 Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.30 A, ƒ1 = 2170 MHz, ƒ2 = 2169 MHz 3rd Order 5th 7th 45 50 Output Power, PEP (dBm) 55 PTFB211803EL PTFB211803FL Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz 19 55 18 Gain 17 Efficiency 16 45 35 25 15 15 41 43 45 47 49 51 53 Output Power (dBm) Data Sheet 5 of 14 Rev. 05.1, 2016-06-15 5 Page Reference Circuit (cont.) Components Information Component Description Input C101, C106, C107 Chip capacitor,10 pF C102, C105 Chip capacitor, 0.1 μF C103, C104 Chip capacitor, 4.71 μF C108 Chip capacitor, 2.1 pF C801, C802, C803 Capacitor, 1000 pF R101, R102, R802, R803 R801 Resistor, 10 Ω Resistor, 1300 Ω R804 R805 S1 Resistor, 100 Ω Resistor, 1200 Ω Transistor S2 Voltage Regulator S4 Potentiometer, 2k Ω Output C201 C202, C210 C203 C204, C205 C206, C208 C207, C209 Chip capacitor, 10 pF Capacitor, 10 μF Chip capacitor, 0.3 pF Capacitor, 100 μF Chip capacitor, 2.2 μF Chip capacitor, 1 μF PTFB211803EL PTFB211803FL Suggested Manufacturer P/N ATC Digi-Key Digi-Key ATC Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key ATC100B100JW500XJ PCC104BCT-ND 493-2372-2-ND ATC100B2R1BW500XB PCC1772CT-ND P10ECT-ND P1.3KGCT-ND P100ECT-ND P1.2KGCT-ND BCP56-ND LM78L05ACM-ND 3224W-202ECT-ND ATC Digi-Key ATC Digi-Key Digi-Key Digi-Key ATC100B100JW500XJ 587-1818-2-ND ATC100B0R3BW500XB PCE4442TR-ND 445-1447-2-ND 445-1411-2-ND Data Sheet 11 of 14 Rev. 05.1, 2016-06-15 11 Page

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