(PDF) APT13005SU-G1 Datasheet - Silicon NPN Power Transistor

Número de pieza	APT13005SU-G1
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon NPN Power Transistor isc Product Specification APT13005SU-G1 DESCRIPTION · High Collector-Emitter Voltage : VCES= 700V(Min.) ·Fast Switching Speed ·Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges for Mobile Phone of BCD Solution ·Power supply for DVD/STB of BCD Solution ·Driver for LED Lighting of BCD Solution ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 3.2 A ICM Collector Current-Peak 6.4 A IB Base Current PC Collector Power Dissipation Tc=25℃ Ti Junction Temperature Tstg Storage Temperature Range 1.6 20 150 -55~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark 1 page

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PDF APT13005SU-G1 Data sheet ( Hoja de datos )