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PDF MSN6004F Data sheet ( Hoja de datos )
| Número de pieza | MSN6004F | |
| Descripción | 600V(D-S) N-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
| Logotipo |  |
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MSN6004F
600V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =600V,ID =4A
RDS(ON) <2.4 Ω @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN6004F
MSN6004F
TO-220F-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
IDM
PD
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
600
±30
4
3.2?
16
30
1.47
240
-55 To 155
Unit
V
V
A
A
A
W
W/℃
mJ
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/5
1 page  
TO-220F-3L Package Information
MSN6004F
MORE Semiconductor Company Limited
http://www.moresemi.com
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MSN6004F.PDF ] | |
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