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PDF BS2101F Data sheet ( Hoja de datos )
| Número de pieza | BS2101F | |
| Descripción | 600V High voltage High & Low-side / Gate Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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600V High voltage
High & Low-side, Gate Driver
BS2101F
General Description
The BS2101F is a monolithic high and low side gate drive
IC, which can drive high speed power MOSFET and IGBT
driver with bootstrap operation.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 600V.
The logic inputs can be used 3.3V and 5.0V.
The Under Voltage Lockout (UVLO) circuit prevents
malfunction when VCC and VBS are lower than the
specified threshold voltage.
Key Specifications
High-side floating supply voltage:
600V
Output voltage range:
Min Output Current Io+/Io-:
10V to 18V
60mA/130mA
Turn-on/off time:
220ns(Typ)
Delay Matching:
50ns(Max)
Offset supply leakage current:
Operating temperature range:
50µA (Max)
-40°C to +125°C
Package
SOP-8
W(Typ) x D(Typ) x H(Max)
5.00mm x 6.20mm x 1.71mm
Features
Floating Channels for Bootstrap Operation to +600V
Gate drive supply range from 10V to 18V
Built-in Under Voltage Lockout for Both Channels
3.3V and 5.0V Input Logic Compatible
Matched Propagation Delay for Both Channels
Output in phase with input
Applications
MOSFET and IGBT high side driver applications
Typical Application Circuits
VCC
LIN
HIN
LIN
HIN
VCC
COM
VB
HO
VS
LO
Up to 600V
TTOO
LLOORADD
Figure 1. Typical Application Circuit
〇Product structure : Silicon monolithic integrated circuit
.www.ro hm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
〇This product has no designed protection against radioactive rays
1/19
TSZ02201-0Q3Q0BZ00510-1-2
2.JUN.2016 Rev.002
1 page  
BS2101F
DC Operation Electrical Characteristics
(Unless otherwise specified: Ta=25°C, VCC=15V, VBS=15V, VS=COM, CL=1000pF)
Parameter
VCC and VBS supply undervoltage
positive going threshold
VCC and VBS supply undervoltage
negative going threshold
VCC supply undervoltage lockout
hysteresis
Offset supply leakage current
Symbol
VCCUV+
VBSUV+
VCCUV-
VBSUV-
VCCUVH
VBSUVH
ILK
Min
8
7.4
0.3
-
Limits
Typ
8.9
8.2
0.7
-
Max
9.8
9
-
50
Quiescent VBS supply current
IQBS 20
60 150
Quiescent VCC supply current
IQCC 50 120 240
Logic “1” input voltage
VIH 2.6
-
-
Logic “0” input voltage
VIL -
- 1.0
High level output voltage, VCC (VBS) - VO
VOH
-
- 2.8
Low level output voltage, VO
VOL
1.2
Logic “1” input bias current
IIN+ -
5 40
Logic “0” input bias current
IIN- - 1.0 2.0
Output high short circuit pulse current
IO+ 60
-
-
Output low short circuit pulsed current
IO- 130
-
-
AC Operation Electrical Characteristics
(Unless otherwise specified: Ta=25°C, VCC=15V, VBS=15V, VS=COM, CL=1000pF)
Parameter
Turn-on propagation delay
Symbol
ton
Min
120
Limits
Typ
220
Max
320
Turn-off propagation delay
toff 130 220 330
Turn-on rise time
tr 60 200 300
Turn-off fall time
tf 20 100 170
Unit Conditions
V
VB = VS = 600V
µA VIN = 0V or 5V
VIN = 0V or 5V
V
IO = 20mA
VIN = 5V
µA
VIN = 0V
VO = 0V
Pulse Width≦10µs
mA
VO = 15V
Pulse Width≦10µs
Unit Conditions
VS = 0V
VS = 0V or 600V
ns
www.ro hm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/19
TSZ02201-0Q3Q0BZ00510-1-2
2.JUN.2016 Rev.002
5 Page 
BS2101F
Truth table
Timing Chart
Input
LIN HIN
LL
HL
LH
HH
Output
LO HO
LL
HL
LH
HH
50%
HIN
LIN
ton
tr
50%
toff t f
90%
HO
LO 10%
90%
10%
Figure 22. Detail Timing Chart
www.ro hm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/19
TSZ02201-0Q3Q0BZ00510-1-2
2.JUN.2016 Rev.002
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet BS2101F.PDF ] | |
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