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PDF 2SD1980 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1980 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1980
DESCRIPTION
·Darlington connection for high DC current gain
·Built in resistor between base and emitter
·Built in damper diode
·Complementary PNP types:2SB1316
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous 2.0 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
3.0 A
10 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1980.PDF ] | |
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