(PDF) MBR3060 Datasheet - Schottky Barrier Rectifier ( Diode )

Número de pieza	MBR3060
Descripción	Schottky Barrier Rectifier ( Diode )
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR3060 FEATURES ·Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: TO-3P package ·Mounting position: Any ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VDC IF(AV) IFSM TJ Peak Repetitive Reverse Voltage 60 Maximum RMS Voltage 42 Maximum DC Blocking Voltage 60 Average Rectified Forward Current (Per Leg) (Total) 15 30 Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) 300 Junction Temperature -65~150 V V V A A ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF MBR3060 Data sheet ( Hoja de datos )