(PDF) MJD253 Datasheet - Silicon PNP Power Transistor

Número de pieza	MJD253
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon PNP Power Transistor INCHANGE Semiconductor MJD253 DESCRIPTION ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -1 1.4 12.5 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF MJD253 Data sheet ( Hoja de datos )