(PDF) MBR20L60CT Datasheet - Schottky Barrier Rectifier ( Diode )

Número de pieza	MBR20L60CT
Descripción	Schottky Barrier Rectifier ( Diode )
Fabricantes	Inchange Semiconductor
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No Preview Available ! Schottky Barrier Rectifier INCHANGE Semiconductor MBR20L60CT FEATURES ·Guard -Ring for Stress Protection ·Low Power Loss/High Efficiency ·High surge capability ·Pb-Free Packages are Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 60 20 240 V A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF MBR20L60CT Data sheet ( Hoja de datos )