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PDF MBR1535CT Data sheet ( Hoja de datos )
| Número de pieza | MBR1535CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR1535CT
FEATURES
·Center-Tap Configuation
·Guardring for Stress protection
·Low Forward Voltage
·High Operating Junction Temperature
·Guaranteed Reverse Avalanche
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 105℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
35
7.5
15
150
1.0
V
A
A
A
A
TJ Junction Temperature
-65~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
1000 V/μs
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR1535CT.PDF ] | |
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