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Número de pieza | MBR10L60CT | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR10L60CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10L60CT
FEATURES
·Low Forward Voltage
·Low Power Loss/High Efficiency
·High surge capability
·Guard -Ring for Stress Protection
·Pb-Free Packages are Available
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power Supply-output Rectification
·Power Management
·Instrumentation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
Average Rectified Forward Current
(Rated VR) TC= 140℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
60
5
10
200
V
A
A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-65~175 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR10L60CT.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBR10L60CT | Power Rectifier | ON Semiconductor |
MBR10L60CT | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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