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PDF AS4C32M16D2A-25BIN Data sheet ( Hoja de datos )
| Número de pieza | AS4C32M16D2A-25BIN | |
| Descripción | 32M x 16 bit DDR2 Synchronous DRAM | |
| Fabricantes | Alliance Semiconductor | |
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AS4C32M16D2A-25BIN
32M x 16 bit DDR2 Synchronous DRAM (SDRAM)
Advanced (Rev. 1.2, Jun. /2014)
Features
• JEDEC Standard Compliant
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Power supplies: VDD & VDDQ = +1.8V ± 0.1V
• Operating temperature: TC = -40℃~95℃
• Supports JEDEC clock jitter specification
• Fully synchronous operation
• Fast clock rate: 333/400/533MHz
• Differential Clock, CK & CK#
• Bidirectional single/differential data strobe
- DQS & DQS#
• 4 internal banks for concurrent operation
• 4-bit prefetch architecture
• Internal pipeline architecture
• Precharge & active power down
• Programmable Mode & Extended Mode registers
• Posted CAS# additive latency (AL): 0, 1, 2, 3, 4, 5, 6
• WRITE latency = READ latency - 1 tCK
• Burst lengths: 4 or 8
• Burst type: Sequential / Interleave
• DLL enable/disable
• Off-Chip Driver (OCD)
- Impedance Adjustment
- Adjustable data-output drive strength
• On-die termination (ODT)
• RoHS compliant
• Auto Refresh and Self Refresh
• 8192 refresh cycles / 64ms
- Average refresh period
7.8µs @ -40 TC +85
3.9µs @ +85 TC +95
• 84-ball 8x12.5x1.2mm (max) FBGA
- Pb and Halogen Free
Overview
The AS4C32M16D2A-25BIN is a high-
speed CMOS Double-Data-Rate-
Two (DDR2), synchronous dynamic random-access
memory (SDRAM) containing 512 Mbits in a 16-bit
wide data I/Os. It is internally configured as a quad
bank DRAM, 4 banks x 8Mb addresses x 16 I/Os
The device is designed to comply with DDR2 DRAM
key features such as posted CAS# with additive latency,
Write latency = Read latency -1, Off-Chip Driver (OCD)
impedance adjustment, and On Die Termination(ODT).
All of the control and address inputs are
synchronized with a pair of externally supplied differenti
al clocks. Inputs are latched at the cross point of
differential clocks (CK rising and CK# falling)
All I/Os are synchronized with a pair of bidirectional
strobes (DQS and DQS#) in a source synchronous
fashion. The address bus is used to convey row,
column, and bank address information in RAS #
, CAS# multiplexing style. Accesses begin with
the registration of a Bank Activate command, and
then it is followed by a Read or Write command. Read
and write accesses to the DDR2 SDRAM are 4 or
8-bit burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence. Operating
the four memory banks in an interleaved fashion
allows random access operation to occur at a higher
rate than is possible with standard DRAMs. An auto
precharge function may be enabled to provide a self-
timed row precharge that is initiated at the end of the
burst sequence. A sequential and gapless data rate
is possible depending on burst length, CAS latency,
and speed grade of the device.
Table 1. Ordering Information
Part Number
Clock Frequency
AS4C32M16D2A-25BIN
400MHz
Data Rate
800Mbps/pin
Power Supply
VDD 1.8V, VDDQ 1.8V
Package
FBGA
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice
Rev.1.2
1 Jun./2014
1 page  
AS4C32M16D2A-25BIN
Ball Descriptions
Table 3. Ball Descriptions
Symbol
CK, CK#
CKE
BA0, BA1
A0-A12
CS#
Type
Input
Input
Input
Input
Input
Description
Differential Clock: CK, CK# are driven by the system clock. All SDRAM input signals are
sampled on the crossing of positive edge of CK and negative edge of CK#. Output (Read)
data is referenced to the crossings of CK and CK# (both directions of crossing).
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE goes
LOW synchronously with clock, the internal clock is suspended from the next clock cycle
and the state of output and burst address is frozen as long as the CKE remains LOW.
When all banks are in the idle state, deactivating the clock controls the entry to the Power
Down and Self Refresh modes.
Bank Address: BA0 and BA1 define to which bank the BankActivate, Read, Write, or
BankPrecharge command is being applied.
Address Inputs: A0-A12 are sampled during the BankActivate command (row address
A0-A12) and Read/Write command (column address A0-A9 with A10 defining Auto
Precharge).
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command
decoder. All commands are masked when CS# is sampled HIGH. CS# provides for
external bank selection on systems with multiple banks. It is considered part of the
command code.
RAS#
CAS#
WE#
LDQS,
LDQS#
UDQS
UDQS#
LDM,
UDM
DQ0 - DQ15
ODT
Input
Input
Input
Input /
Output
Input
Input /
Output
Input
Row Address Strobe: The RAS# signal defines the operation commands in conjunction
with the CAS# and WE# signals and is latched at the crossing of positive edges of CK
and negative edge of CK#. When RAS# and CS# are asserted "LOW" and CAS# is
asserted "HIGH," either the BankActivate command or the Precharge command is
selected by the WE# signal. When the WE# is asserted "HIGH," the BankActivate
command is selected and the bank designated by BA is turned on to the active state.
When the WE# is asserted "LOW," the Precharge command is selected and the bank
designated by BA is switched to the idle state after the precharge operation.
Column Address Strobe: The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the crossing of positive
edges of CK and negative edge of CK#. When RAS# is held "HIGH" and CS# is asserted
"LOW," the column access is started by asserting CAS# "LOW." Then, the Read or Write
command is selected by asserting WE# “HIGH " or “LOW".
Write Enable: The WE# signal defines the operation commands in conjunction with the
RAS# and CAS# signals and is latched at the crossing of positive edges of CK and
negative edge of CK#. The WE# input is used to select the BankActivate or Precharge
command and Read or Write command.
Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data Strobe
is edge triggered. Write Data Strobe provides a setup and hold time for data and DQM.
LDQS is for DQ0~7, UDQS is for DQ8~15. The data strobes LDOS and UDQS may be
used in single ended mode or paired with LDQS# and UDQS# to provide differential pair
signaling to the system during both reads and writes.A control bit at EMR (1)[A10]
enables or disables all complementary data strobe signals.
Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle.
LDM masks DQ0-DQ7, UDM masks DQ8-DQ15.
Data I/O: Bi-directional data bus.
On Die Termination: ODT enables internal termination resistance. It is applied to each
DQ, LDQS/LDQS#, UDQS/UDQS#, LDM, and UDM signal. The ODT pin is ignored if the
EMR (1) is programmed to disable ODT.
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice
Rev.1.2
5 Jun./2014
5 Page 
AS4C32M16D2A-25BIN
- EMR(2)
The extended mode register (2) controls refresh related features. The default value of the extended mode
register (2) is not defined, therefore the extended mode register (2) must be written after power-up for proper
operation. The extended mode register(2) is written by asserting LOW on CS#, RAS#, CAS#, WE#, HIGH on
BA1 and LOW on BA0, while controlling the states of address pins A0 ~ A12. The DDR2 SDRAM should be in
all bank precharge with CKE already HIGH prior to writing into the extended mode register (2). The mode
register set command cycle time (tMRD) must be satisfied to complete the write operation to the extended mode
register (2). Mode register contents can be changed using the same command and clock cycle requirements
during normal operation as long as all banks are in the precharge state.
Table 7. Extended Mode Register EMR (2) Bitmap
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field
10
0*1
SRF
0*1
DCC*4
PASR*3
Extended Mode Register(2)
A7 High Temperature Self-Refresh Rate Enable
0 Disable
1 Enable *2
BA1 BA0 MRS mode
00
MR
0 1 EMR(1)
1 0 EMR(2)
1 1 EMR(3)
A3 DCC Enable *4
0 Disable
1 Enable
A2 A1 A0 Partial Array Self Refresh for 4 Banks
0 0 0 Full array
0 0 1 Half Array (BA[1:0]=00&01)
0 1 0 Quarter Array (BA[1:0]=00)
0 1 1 Not defined
1 0 0 3/4 array (BA[1:0]=01,10&11)
1 0 1 Half array (BA[1:0]=10&11)
1 1 0 Quarter array (BA[1:0]=11)
1 1 1 Not defined
NOTE 1: The rest bits in EMRS(2) are reserved for future use and all bits in EMRS(2) except A0-A2, A7, BA0 and BA1 must
be programmed to 0 when setting the extended mode register(2) during initialization.
NOTE 2: Due to the migration nature, user needs to ensure the DRAM part supports higher than 85 Tcase temperature
self-refresh entry. If the high temperature self-refresh mode is supported then controller can set the EMRS2[A7] bit to
enable the self-refresh rate in case of higher than 85 temperature self-refresh operation.
NOTE 3: If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified location will
be lost if self refresh is entered. Data integrity will be maintained if tREF conditions are met and no Self Refresh
command is issued.
NOTE 4: DCC (Duty Cycle Corrector) implemented, user may be given the controllability of DCC thru EMR (2) [A3] bit.
Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211
Alliance Memory Inc. reserves the right to change products or specification without notice
Rev.1.2
11 Jun./2014
11 Page | ||
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