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Número de pieza | MSN014WE | |
Descripción | N-Channel Enhancement Mode Power MOS FET | |
Fabricantes | MORESEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSN014WE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =14A
RDS(ON) <7 mΩ @ VGS=4.5V
RDS(ON) <9 mΩ @ VGS=2.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Application
● PWM application
● Load switch
PIN Configuration
Lead Free
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0214WE
MSN0214WE
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±10
14
44
3
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
42 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page MSN014WE
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet MSN014WE.PDF ] |
Número de pieza | Descripción | Fabricantes |
MSN014WE | N-Channel Enhancement Mode Power MOS FET | MORESEMI |
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