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PDF MSN014WE Data sheet ( Hoja de datos )

Número de pieza MSN014WE
Descripción N-Channel Enhancement Mode Power MOS FET
Fabricantes MORESEMI 
Logotipo MORESEMI Logotipo



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No Preview Available ! MSN014WE Hoja de datos, Descripción, Manual

MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
VDS =20V,ID =14A
RDS(ON) <7 m@ VGS=4.5V
RDS(ON) <9 m@ VGS=2.5V
ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package
ESD protected
Application
PWM application
Load switch
PIN Configuration
Lead Free
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0214WE
MSN0214WE
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±10
14
44
3
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
42 /W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6

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MSN014WE pdf
MSN014WE
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
MORE Semiconductor Company Limited
http://www.moresemi.com
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