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Número de pieza | MSC0206W | |
Descripción | Dual N-Channel Enhancement Mode Power MOS FET | |
Fabricantes | MORESEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSC0206W (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MSC0206W
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =6A
RDS(ON) < 28m Ω @ VGS=4.5V
RDS(ON) < 37mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin Assignment
SOP-8 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSC0206W
MSC0206W
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±10
6
3.8
25
1.25
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
100 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
1 page MSC0206W
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MSC0206W.PDF ] |
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