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PDF MSC0203S Data sheet ( Hoja de datos )
| Número de pieza | MSC0203S | |
| Descripción | N and P-Channel Enhancement Mode Power MOS FET | |
| Fabricantes | MORESEMI | |
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MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
VDS = 20V,ID = 3A
RDS(ON) < 65mΩ @ VGS=4.5V
RDS(ON) < 90mΩ @ VGS=2.5V
● P-Channel
VDS = -20V,ID = -3A
RDS(ON) < 110mΩ @ VGS=-4.5V
RDS(ON) < 140mΩ @ VGS=-2.5V
Lead Free
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
pin Assignment
PIN Configuration
SOT-23-6L top view
N-channel
P-channel
Package Marking and Ordering Information
Device Marking
Device
MSC0203S
Device Package
SOT-23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25℃
TA=70℃
TA=25℃
VGS ±12
3
ID
2.4
IDM 13
PD 0.8
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
P-Channel
-20
±12
-3
-2.4
-13
0.8
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
RθJA
N-Ch
P-Ch
156
156
Unit
V
V
A
A
W
℃
℃/W
℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
1/10
1 page  
MSC0203S
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
MORE Semiconductor Company Limited
http://www.moresemi.com
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MSC0203S.PDF ] | |
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