DataSheet.es    


PDF MTE300N20J3 Data sheet ( Hoja de datos )

Número de pieza MTE300N20J3
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech Electronics 
Logotipo CYStech Electronics Logotipo



Hay una vista previa y un enlace de descarga de MTE300N20J3 (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! MTE300N20J3 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date : 2016.01.14
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTE300N20J3 BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=3A
200V
8.3A
294mΩ(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTE300N20J3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
MTE300N20J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE300N20J3
CYStek Product Specification

1 page




MTE300N20J3 pdf
CYStech Electronics Corp.
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date : 2016.01.14
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
100
C oss 0.8
10
0
10
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
1 VDS=15V
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
10 Limited
1
0.1 TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
1000
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=100V
8 VDS=40V
6
VDS=160V
4
2 ID=3A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
10
9
8
7
6
5
4
3
2
1 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTE300N20J3
CYStek Product Specification

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet MTE300N20J3.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MTE300N20J3N-Channel Enhancement Mode Power MOSFETCYStech Electronics
CYStech Electronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar