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Número de pieza | MTC4503H8 | |
Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTC4503H8 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C384H8
Issued Date : 2015.07.16
Revised Date : 2015.09.03
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC4503H8 BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
30V
9.4A
27A
13mΩ
17mΩ
P-CH
-30V
-7.8A
-22.5A
21mΩ
35mΩ
Equivalent Circuit
MTC4503H8
Outline
Pin 1
DFN5×6
G:Gate S:Source D:Drain
Ordering Information
Device
MTC4503H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC4503H8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C384H8
Issued Date : 2015.07.16
Revised Date : 2015.09.03
Page No. : 5/13
Typical Characteristics : Q1( N-channel )
40
35
30
25
20
15
10
5
0
0
Typical Output Characteristics
4.5V
10V, 9V, 8V, 7V, 6V, 5V
4V
3.5V
VGS=3V
1 23 4
VDS, Drain-Source Voltage(V)
5
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VGS=3V
VGS=10V
VGS=4.5V
1
0.8
0.6
0.4
Tj=25°C
Tj=150°C
10
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=6A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
2 46 8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.2 VGS=10V, ID=6A
2
1.8
1.6
1.4
1.2
1
0.8
0.6 RDS(ON)@Tj=25°C : 13mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC4503H8
CYStek Product Specification
5 Page Reel Dimension
CYStech Electronics Corp.
Spec. No. : C384H8
Issued Date : 2015.07.16
Revised Date : 2015.09.03
Page No. : 11/13
Carrier Tape Dimension
MTC4503H8
CYStek Product Specification
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet MTC4503H8.PDF ] |
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