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PDF MTC3588N6 Data sheet ( Hoja de datos )
| Número de pieza | MTC3588N6 | |
| Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTC3588N6 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 1/12
N- And P-Channel Enhancement Mode Power MOSFET
MTC3588N6 BVDSS
N-CH
14V
ID @ TA=25 °C 5.4A(VGS=4.5V)
17.6mΩ(VGS=4.5V)
RDSON(TYP.)
24.7mΩ(VGS=2.5V)
39.5mΩ(VGS=1.8V)
67.3mΩ(VGS=1.5V)
P-CH
-14V
-3.6A(VGS=-4.5 V)
45.1mΩ(VGS=-4.5V)
65.6mΩ(VGS=-2.5V)
88.5mΩ(VGS=-1.8V)
154.3mΩ(VGS=-1.5V)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588N6
Outline
SOT-26
D2
S1
D1
G：Gate S：Source D：Drain
G2
S2
G1
Ordering Information
Device
Package
MTC3588N6-0-T1-G
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3588N6
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 5/12
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4 ID=250μA
C oss 1.2
100 1.0
Crss
0.8
0.6
10
0.1
1
VDS, Drain-Source Voltage(V)
0.4
10 -75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
50
40 TJ(MAX)=150°C
TA=25°C
RθJA=110°C/W
30
20
10
0
0.001 0.01
0.1
1
10 100
Pulse Width(s)
Gate Charge Characteristics
10
ID=3A
8
VDS=10V
6
4
2
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
10
RDS(ON)
Limited
1
100μs
1ms
10ms
100ms
0.1 TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=110°C/W
Single Pulse
DC
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100
MTC3588N6
Maximum Drain Current vs JunctionTemperature
6.0
5.0
4.0
3.0
2.0
1.0 TA=25°C, VGS=4.5V, RθJA=110°C/W
0.0
25
50 75 100 125 150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 11/12
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
100°C
150°C
−Temperature Max(TS max)
−Time(ts min to ts max)
150°C
60-120 seconds
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC3588N6
CYStek Product Specification
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MTC3588N6.PDF ] | |
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