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PDF MTC3588BDFA6 Data sheet ( Hoja de datos )
| Número de pieza | MTC3588BDFA6 | |
| Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C102DFA6
Issued Date : 2015.12.03
Revised Date :
Page No. : 1/13
N- And P-Channel Enhancement Mode MOSFET
MTC3588BDFA6
N-CH
BVDSS
14V
P-CH
-14V
ID
6A(VGS=4.5V)
-4A(VGS=-4.5 V)
16.6mΩ(VGS=4.5V) 43mΩ(VGS=-4.5V)
RDSON(TYP.)
23.7mΩ(VGS=2.5V)
38.5mΩ(VGS=1.8V)
63.6mΩ(VGS=-2.5V)
86.5mΩ(VGS=-1.8V)
66.3mΩ(VGS=1.5V) 153.3mΩ(VGS=-1.5V)
Description
The MTC3588BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Pb-free lead plating and halogen-free package
• Low on-resistance
• Fast switching speed
• Low gate charge
Equivalent Circuit
MTC3588BDFA6
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
Package
MTC3588BDFA6-0-T1-G
DFN2×2-6L
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3588BDFA6
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C102DFA6
Issued Date : 2015.12.03
Revised Date :
Page No. : 5/13
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
C oss
ID=1mA
100 1
Crss
0.8
0.6 ID=250μA
10
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-Source Voltage(V)
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
50
40 TJ(MAX)=150°C
TA=25°C
RθJA=90°C/W
30
20
10
0
0.001 0.01
0.1
1
10 100
Pulse Width(s)
Gate Charge Characteristics
10
8
6
4
VDS=10V
2 ID=3A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
10
RDS(ON)
Limited
100μs
1ms
1 10ms
100ms
0.1 TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=90°C/W
Single Pulse
DC
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100
MTC3588BDFA6
Maximum Drain Current vs JunctionTemperature
6
5
4
3
2
1 TA=25°C, VGS=4.5V, RθJA=90°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Carrier Tape Dimension
Spec. No. : C102DFA6
Issued Date : 2015.12.03
Revised Date :
Page No. : 11/13
MTC3588BDFA6
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTC3588BDFA6.PDF ] | |
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