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PDF MTC3586DFA6 Data sheet ( Hoja de datos )
| Número de pieza | MTC3586DFA6 | |
| Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTC3586DFA6 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTC3586DFA6
N-CH
BVDSS
20V
ID 5A(VGS=4.5V)
27mΩ(VGS=4.5V)
P-CH
-20V
-3.3A(VGS=-4.5 V)
78mΩ(VGS=-4.5V)
Description
RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V)
82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V)
The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3586DFA6
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
Package
MTC3586DFA6-0-T1-G
DFN2×2-6L
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTC3586DFA6
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 5/13
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.6
1.4 ID=250μA
1.2
100
1
C oss
0.8
Crss
0.6
10
0.1
1 10
VDS, Drain-Source Voltage(V)
0.4
100 -60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
50
40 TJ(MAX)=150°C
TA=25°C
θJA=90°C/W
30
20
10
0
0.001 0.01
0.1
1
10 100
Pulse Width(s)
Gate Charge Characteristics
10
8 VDS=16V
6 VDS=10V
4
2
ID=3A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
10
RDS(ON)
Limited
1
100μs
1ms
10ms
0.1 TA=25°C, Tj=150°C,
VGS=10V, RθJA=90°C/W
Single Pulse
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100ms
DC
100
MTC3586DFA6
Maximum Drain Current vs JunctionTemperature
5
4.5
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA=90°C/W
0.5
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Carrier Tape Dimension
Spec. No. : C835DFA6
Issued Date : 2013.06.03
Revised Date : 2013.10.30
Page No. : 11/13
MTC3586DFA6
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTC3586DFA6.PDF ] | |
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