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PDF MTBA6C15H8 Data sheet ( Hoja de datos )
| Número de pieza | MTBA6C15H8 | |
| Descripción | P- & N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTBA6C15H8 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C938H8
Issued Date : 2016.09.06
Revised Date : 2016.09.12
Page No. : 1/14
N- And P-Channel Enhancement Mode MOSFET
MTBA6C15H8 BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
150V
2.4A
6.8A
172mΩ
178mΩ
P-CH
-150V
-2.0A
-5.8A
257mΩ
275mΩ
Equivalent Circuit
MTBA6C15H8
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device
MTBA6C15H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA6C15H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C938H8
Issued Date : 2016.09.06
Revised Date : 2016.09.12
Page No. : 5/14
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1.2
100
C oss
10
0
Crss
20 40 60 80
VDS, Drain-Source Voltage(V)
100
ID=1mA
1
0.8
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
Gate Charge Characteristics
10
VDS=75V
8
VDS=30V
6
4
VDS=120V
2
ID=2.5A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
Maximum Drain Current vs Junction Temperature
3
10 RDS(ON)
Limited
1
100μs
1ms
10ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=50°C/W,Single Pulse
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
100ms
1s
DC
1000
2.5
2
1.5
1
0.5 TA=25°C, Tj(max)=150°C,VGS=10V
RθJA=50°C/W
0
25 50 75 100 125 150
TJ, Junction Temperature(°C)
175
MTBA6C15H8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Recommended Stencil Design
Spec. No. : C938H8
Issued Date : 2016.09.06
Revised Date : 2016.09.12
Page No. : 11/14
Note : 1. Stencil thickness 5 mil (0.127mm)
2. May need to be adjusted to specific requirements.
MTBA6C15H8
CYStek Product Specification
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MTBA6C15H8.PDF ] | |
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