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PDF BUL810 Data sheet ( Hoja de datos )
| Número de pieza | BUL810 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL810
DESCRIPTION
·High Voltage Capability
·High Switching Speed
APPLICATIONS
Designed for use in lighting applications and low cost
swith-mode power supplies.
·Electronic transformer for halogen lamps
·Electronic ballasts for fluorescent lighting
·Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
500 V
VEBO Emitter-Base Voltage
9V
IC Collector Current-Continuous
15 A
ICM Collector Current-peak ( tp <5 ms ) 22
A
IBB Base Current-Continuous
5A
IBM Base Current-peak ( tp <5 ms )
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
10 A
125 W
150 ℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction-Case
1.0
Thermal Resistance,Junction-Ambient 30
℃/W
℃/W
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL810.PDF ] | |
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