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PDF RTH35003-20D Data sheet ( Hoja de datos )
| Número de pieza | RTH35003-20D | |
| Descripción | GaN Doherty Hybrid Amplifier | |
| Fabricantes | RFHIC | |
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GaN Doherty Hybrid Amplifier RTH35003-20D
Product Features
• GaN on SiC Chip on Board
• Surface Mount Hybrid Type
• 2-Stage Doherty Amplifier
• High Efficiency
• No Matching circuit needed
Applications
• RF Sub-Systems
• Base Station
• RRH
•4G/ LTE system
• Small cell
Description
Package Type : SP-1E
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power
density Gallium Nitride (GaN) semiconductor process.
Electrical Specifications @ Vds=30V, Ta=25℃
PARAMETER
Frequency Range
Power Gain
Gain Flatness
Input Return Loss
Pout @ Average
UNIT
MHz
dB
dBm
MIN
3520
21
-1.5
-
-
TYP
3540
24
-
-14
35.1
MAX
3560
-
+1.5
-9
-
Pout @ Saturation dBm 42.6
43.5
-
ACLR @ BW 20MHz 2FA
LTE (PAPR 7.5dB)
dBc
-
-
-29 -25
-53 -
Doherty Efficiency
Total Efficiency
%
-
35
46
38
-
-
Drive Amp. Idq
- 40 -
Carrier Amp. Idq
mA
-
110
-
Peaking Amp. Idq
-0-
-4.9 -2.8 -2.0
-4.9 -2.8 -2.0
Supply Voltage
V
-4.9 -4.8 -3.0
- 30 -
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on Turn on the Gate voltage supply and last turn on the Drain voltage supplies
Turn off Turn off the Drain voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=35.1dBm @ fc± 40MHz / 38.06MHz
LTE 20MHz 2FA PAPR=7.5dB @ 0.01% probability on CCDF
Mechanical Specifications
CONDITION
ZS = ZL = 50 ohm
-
3.236W
Pulse Width=20us,
Duty cycle 10%
Non DPD
With DPD
Tc=25℃
-
-
Vgd
Vgc
Vgp
Vds
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYPICAL
6.0
32 x 20 x 4.2
RATING
±1.0
±0.15
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facilities : 919-677-8780 / [email protected]
1/6
All specifications may change without notice
Version 3.0
1 page  
GaN Doherty Hybrid Amplifier RTH35003-20D
Package Dimensions (Type: SP-1E)
* Unit: mm[inch] | Tolerance: ±0.15[.006]
PCB
LID
* Unit: mm[inch] | Tolerance: ±0.15[.006]
4
[.157]
7
[.276]
7
[.276]
7
[.276]
7
[.276]
20
[.787]
5
[.197]
32
[1.26]
▲ Top View
4.2
[.165]
2.5
[.098]
1.5
[.059]
▲ Side View
3
[.118]
1
[.039]
31.8
[1.252]
▲ Bottom View
Pin Description (RTH35003-20D)
Pin No Function Pin No Function Pin No Function Pin No Function
1
Vgd
4 GND
8
GND
11
Vds
2 RF In 5
Vgp
9
RF Out
12
GND
3 GND 6 GND 10 GND 13 Vgc
7 Vds
14 Vds
Recommended Mounting Configuration
* Mounting Configuration Notes
1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat.
2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws
be added near the heatsink to mount the board
3. In designing the necessary RF trace, width will depend upon the PCB material and construction.
4. Use 1 oz. Copper minimum thickness for the heatsink.
5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink
6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
7. We recommend that the PCB with the RF device in a hybrid package(RTH Series) is not washed to remove the flux.
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facilities : 919-677-8780 / [email protected]
5/6
All specifications may change without notice
Version 3.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RTH35003-20D.PDF ] | |
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