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PDF AM4N60D Data sheet ( Hoja de datos )
| Número de pieza | AM4N60D | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
N-Channel 600-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Supplies
• Motor Drives
• Consumer Electronics
AM4N60D
VDS (V)
600
PRODUCT SUMMARY
rDS(on) (Ω)
2 @ VGS = 10V
ID (A)
4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 600
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TC=25°C
VGS
ID
IDM
IS
±20
4
16
4
Pulsed Diode Forward Current b
Power Dissipation a
TC=25°C
ISM
PD
16
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
40
3
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM4N60D_1A
1 page  
Analog Power
Package Information
AM4N60D
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed
0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate Burrs And
Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.
© Preliminary
5 Publication Order Number: DS_AM4N60D_1A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM4N60D.PDF ] | |
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