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PDF AP6P250N Data sheet ( Hoja de datos )

Número de pieza AP6P250N
Descripción P-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP6P250N Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP6P250N
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Package Outline
D
Surface Mount Device
RoHS Compliant & Halogen-Free
SOT-23S G
S
Description
AP6P250N series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-23S package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
-60V
250mΩ
-1.6A
D
G
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
-60 V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
-1.6
-1.3
-10
1.25
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
100
Unit
/W
1
201602242

1 page




AP6P250N pdf
AP6P250N
2
I D = -1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
1000
T j =25 o C
800
600
.
400
-4.5V
200 V GS = -10V
0
0 3 6 9 12
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
1.6
1.2
0.8
0.4
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
5

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