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PDF APA2N70K-HF Data sheet ( Hoja de datos )
| Número de pieza | APA2N70K-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
APA2N70K-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ Halogen Free & RoHS Compliant Product
D
SOT-223
S
D
G
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 package.
G
600V
10Ω
0.35A
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
IDM
PD@TA=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
600
+30
0.35
1.4
2.7
0.5
1
-55 to 150
-55 to 150
V
V
A
A
W
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient4
Data & specifications subject to change without notice
Value
45
Unit
℃/W
1
201501134
1 page  
APA2N70K-HF
16
12
I D =0.2A
V DS =540V
8
4
0
02468
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
10
Crss
1
1 10 19 28
V DS (V)
Fig 10. Typical Capacitance Characteristics
1
0.1
T j = 150 o C
0.01
T j = 25 o C
0.001
0
0.3 0.6
V SD (V)
0.9
1.2
Fig 11. Forward Characteristic of
Reverse Diode
4
3.5
3
2.5
2
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APA2N70K-HF.PDF ] | |
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