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PDF PTP08N06N1 Data sheet ( Hoja de datos )
| Número de pieza | PTP08N06N1 | |
| Descripción | 60V N-Channel MOSFET | |
| Fabricantes | PIP | |
| Logotipo |  |
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91&KDQQHO026)(7
Applications:
˗ Power Supply
˗• AdDaCpt-oDr C Converters
• Charger
• SMPS Standby Power
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˗• ESODptimimpirzoevdedBCVaDSpSaCbialiptyability
PTP08N06N1
Pb Lead Free Package and Finish
VDSS
VD6S0SV
650V
RDS(ON)(MAX)
RDS(O1N.1)8:(mTyȟp.)
IDa
1I1D0A
7.0 A
Ordering Information
Part Number
37311
Package
TO-220
Brand
Absolute Maximum Ratings
TC=25ɗ unless otherwise specified
Symbol
VDSS
IDa
IDM
PD
VGS
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current @VG=10V
Power Dissipation
Derating Factor above 25ɗ
Gate-to-Source Voltage
Value
60
110
439
156
1.04
+/-20
EAS
Single Pulse Avalanche Energy
(L=1mH)
IAS Pulsed Avalanche Energy
TJ and TSTG Operating Junction and Storage Temperature Range
00
Figure 9
-55 to 175
Unit
V
A
W
W/ɗ
V
mJ
A
ɗ
Thermal Resistance
Symbol
Parameter
RșJC Junction-to-Case
Min Typ Max Unit
Test Conditions
Water cooled heatsink, PD
ɗ/W adjusted for a peak junction
Temperature of 175ɗ
Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175ɗ. Package limitation current is 80A.
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1 page  
TEST CIRCUITS AND WAVEFORMS
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
D.U.T.
+
-
+
VDS
-
L
RG
Same Type
VGS as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D=
Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig. 1.2 Peak Diode Recovery dv/dt Waveforms
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PTP08N06N1.PDF ] | |
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